HVD138 silicon epitaxial trench pin diode for antenna switching ade-208-958 (z) rev.0 aug. 2000 features adopting the trench structure improves low capacitance. (c = 0.9 pf max) low forward resistance. (rf = 0.8 w max) low operation current. super small flat package (sfp) is suitable for surface mount design. ordering information type no. laser mark package code HVD138 8 sfp outline cathode mark mark 1. cathode 2. anode 12 8
HVD138 2 absolute maximum ratings (ta = 25 c) item symbol value unit reverse voltage v r 30 v forward current i f 100 ma power dissipation pd 150 mw junction temperature tj 125 c storage temperature tstg - 55 to +125 c electrical characteristics (ta = 25 c) item symbol min typ max unit test condition reverse current i r ?? 10 na v r = 25 v forward voltage v f ?? 0.9 v i f = 2 ma capacitance c ?? 0.9 pf v r = 1 v, f = 1 mhz forward resistance r f ?? 0.8 w i f = 2 ma, f = 100 mhz note : 1. please do not use the soldering iron due to avoid high stress to the sfp package.
HVD138 3 main characteristic forward voltage v (v) f forward current i (a) f fig.1 forward current vs. forward voltage fig.3 capacitance vs. reverse voltage reverse voltage v (v) r capacitance c (pf) fig.4 forward resistance vs. forward current forward current i (a) fig.2 reverse current vs. reverse voltage reverse voltage v (v) reverse current i (a) r f r forward resistance r ( ) w f 10 10 10 10 10 0 -5 -4 -3 -2 10 1 10 -1 10 1.0 0.1 10 -13 10 -12 10 -11 f=100mhz f=1mhz 0 0.2 0.4 0.6 0.8 1.0 10 10 -4 10 -6 10 -8 10 -10 10 -12 -2 ta = 75 c ta = 25 c ta = 50 c 040 10 30 20 50 10 -9 10 10 -8 10 -10 10 -12 10 -11 -13 10 -14 ta = 75 c ta = 50 c ta = 25 c
HVD138 4 fig.5 forward resistance (parallel) vs. forward voltage 0 10 10 10 10 10 10 0.2 0.4 0.6 0.8 10 -1 4 10 1 2 3 5 6 0 forward voltage v f (v) forward resistance (parallel) r p ( w ) f=100mhz
HVD138 5 package dimensions hitachi code jedec eiaj mass (reference value) sfp ? ? 0.0010 g unit: mm 1.0 0.10 1.4 0.10 0.3 0.05 0.6 0.05 0.5 - 0.55 0.13 0.05
HVD138 6 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://www.hitachi.com.sg/grp3/sicd japan : http://www.hitachi.co.jp/sicd/index.htm hitachi asia ltd. taipei branch office 3rd flr, hung kuo building, no.167, tun hwa north road, taipei (105) taiwan tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 telex: 23222 has-tp hitachi asia (hong kong) ltd. group iii (electronic components) 7th flr, north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 1.0
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